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FMUSER Original New MRF6VP2600H RF Power Transistor MOSFET Transistor 500W 600W Lateral N-Channel Broadband
FMUSER Original New MRF6VP2600H RF Power Transistor MOSFET Transistor 500MHz 600W Lateral N-Chèn Broadband Apèsi sou lekòl la MRF6VP2600H la fèt sitou pou aplikasyon pou bande ak frekans jiska 500 MHz. Aparèy se inegal ak apwopriye pou itilize nan aplikasyon pou emisyon. Karakteristik * Tipik DVB-T OFDM Pèfòmans: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., F = 225 MHz, Chèn Bandwidth = 7.61 MHz, Antre siyal PAR = 9.3 dB @ 0.01% Pwobabilite sou CCDF. Pouvwa genyen: 25 dB Efikasite drenaj: 28.5% ACPR @ 4 MHz Offset: –61 dBc @ 4 kHz Pleasant * Pèfòmans tipik enpulsyonèl: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Lajè batman kè = 100
Detay
| Pri (USD) | Kte (PCS) | Shipping (USD) | Total (USD) | Shipping Metòd | Peman |
| 245 | 1 | 35 | 280 | DHL |
FMUSER Original New MRF6VP2600H RF Power Transistor MOSFET tranzistò 500MHz 600W Lateral N-Chèn bande
apèsi sou lekòl la
Se MRF6VP2600H a fèt sitou pou aplikasyon pou wideband ak frekans jiska XNHz. Aparèy se inegal e ki apwopriye pou itilize nan emisyon aplikasyon yo.
karakteristik
* Tipik DVB-T OFDM Pèfòmans: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., F = 225 MHz, Chèn Bandwidth = 7.61 MHz, Antre Siyal PAR = 9.3 dB @ 0.01% Pwobabilite sou CCDF. : 25 dB Efikasite drenaj: 28.5% ACPR @ 4 MHz Offset: –61 dBc @ 4 kHz Pleasant
* Pèfòmans tipik enpulsyonèl: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Lajè batman kè = 100 µsec, Sik Devwa = 20% Pouvwa Akeri: 25.3 dB Efikasite drenaj: 59%
* Kapab pou manipile NAN: 10 VSWR, @ 1 Vdc, 50 MHz, 225 Watts Peak pouvwa, Lajè batman kè = 600 µsec, Sik Devwa = 100%
* Karakteristik ak paramèt Seri Enpedans Enpòtan Seri
* CW Operasyon Kapasite ak Refwadisman Adekwa
* Kalifye jiska yon maksimòm de 50 VDD Operasyon
* Entegre Integrated ESD Pwoteksyon
* Fèt pou operasyon pouse-rale
* Pi gwo Negatif Gate-Sous Voltage Range pou Operasyon Gwoup C amelyore
* RoHS Konfòm
* Nan Tep ak bobine. R6 Sifiks = 150 Inite pou chak 56 mm, NAN pous bobine.
Spesifikasyon
Frekans (Min) (MHz): 2
Frekans (Max) (MHz): NAN
Pwovizyon pou Voltage (Tip) (V): NAN
P1dB (Typ) (dBm): NAN
P1dB (Typ) (W): NAN
Pouvwa Sòti (Tip) (W) @ Nivo Intermodulation nan siyal egzamen: 125.0 @ AVG
Siyal tès: OFDM
Pouvwa akeri (tip) (dB) @ f (megaèrts): 25.0 @ 225
Efikasite (Tip) (%): NAN
Rezistans tèmik (Spec) (℃ / W): 0.2
Matche: depaman
Klas: AB
Mouri Teknoloji: LDMOS
| Pri (USD) | Kte (PCS) | Shipping (USD) | Total (USD) | Shipping Metòd | Peman |
| 245 | 1 | 35 | 280 | DHL |
